Copper(I) Selenide Cu2Se

Copper Selenide Cu2Se

Technical Integration: Purification of elemental copper and selenium (processes used include: anode slime enrichment, electrolysis, vacuum distillation, hydrogenation deoxidation, zone melting...) - Synthesis of binary alloy via vacuum melting.

Testing: ICP-MS; XRD; Laser Particle Size Analyzer.

Services: Provision of practical protective measures, material application solutions.

(Especially for sputtering and printing processes in the preparation of copper indium gallium selenide CIGS thin films)

Technical integration services available

Properties: Black cubic crystal. Relative density 6.749. Melting point 1113°C. Obtained by heating a stoichiometric mixture of copper and selenium in a sealed vacuum quartz tube or by reduction from an ammonia solution of copper salt and selenious acid. Used as a semiconductor.

2, Specifications:

Chemical Purity:

High Purity Copper Selenide-05 Purity above 99.999%, total impurities of silver, aluminum, arsenic, gold, cadmium, chromium, copper, iron, magnesium, manganese, nickel, lead, tin, zinc less than 10ppm;

Ultra Pure Copper Selenide-06 Purity above 99.9999%, total impurities of silver, aluminum, arsenic, gold, cadmium, chromium, copper, iron, magnesium, nickel, lead, zinc less than 1ppm.

3, Physical Forms: Ingot, powder, pellet, granule, needle, etc.

4, Applications:

Mainly used in the preparation of group compound semiconductors, copper selenide targets, copper indium gallium selenide thin-film solar cells.

5, Packaging: Vacuum-sealed in plastic film after polyester film packaging.